MTEB6N20H8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C875H8
Issued Date : 2016.01.20
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1
ID=1mA
100
C _oss
10
0
Crss
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
0.8
0.6
ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
Gate Charge Characteristics
10
VDS=100V
8
VDS=40V
6
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01
0.1
1
10
ID, Drain Current(A)
VDS=160V
4
2
ID=3A
0
0
2
4
6
8
10 12
Total Gate Charge---Qg(nC)
Maximum Safe Operating Area
100
RDS(ON)
10
Limited
100μs
1
0.1 TC=25°C, Tj=150°C,
VGS=10V, RθJC=2.5°C/W
Single Pulse
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1ms
10ms
DC
1000
10
9
8
7
6
5
4
3
2
1
0
25
Maximum Drain Current vs Case Temperature
VGS=10V, RθJC=2.5°C/W
50 75 100 125 150 175
TC, Case Temperature(°C)
MTEB6N20H8
CYStek Product Specification