MTEB6N20H8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C875H8
Issued Date : 2016.01.20
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTEB6N20H8
Features
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(typ)@VGS=10V, ID=3A
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
200 V
8A
1.8A
279 mΩ
Symbol
MTEB6N20H8
Outline
Pin 1
DFN5×6
G：Gate
D：Drain
S：Source
Ordering Information
Device
Package
Shipping
MTEB6N20H8-0-T6-G
DFN5×6
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTEB6N20H8
CYStek Product Specification