MTDE5P10N3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C885N3
Issued Date : 2014.08.14
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
10
0.1
Coss
Crss
1
10
100
-VDS, Drain-Source Voltage(V)
Threshold Voltage vs Junction Tempearture
1.4
ID=-250μA
1.2
1
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
10
RDS(ON)
Limit
1
100μs
1ms
10ms
0.1
TA=25°C, Tj=150°, VGS=-10V
RθJA=90°C/W, Single Pulse
0.01
100ms
DC
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
0.2
TA=25°C, VGS=-10V
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
100
80
TJ(MAX)=150°C
TA=25°C
θ JA=90°C/W
60
Gate Charge Characteristics
10
VDS=-80V
8
ID=-1A
6
40
4
20
2
0
0.0001 0.001
0.01 0.1
1
Pulse Width(s)
10 100
0
0
2
4
6
8
10
Qg, Total Gate Charge(nC)
MTDE5P10N3
CYStek Product Specification