MTDE5P10N3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C885N3
Issued Date : 2014.08.14
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode MOSFET
MTDE5P10N3
BVDSS
ID
RDS(ON)@VGS=-10V, ID=-1A
RDS(ON)@VGS=-6V, ID=-1A
-100V
-1.1A
450mΩ(typ)
472mΩ(typ)
Features
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Low gate charge
• Compact and low profile SOT-23 package
• Pb-free & halogen-free package
Equivalent Circuit
MTDE5P10N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTDE5P10N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTDE5P10N3
CYStek Product Specification