MTC5806AQ8-J Datasheet, PDF (5/12 Pages) Cystech Electonics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 5/12
Typical Characteristics(Cont.) : Q1( N-channel)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
Ciss
1.2
ID=250μA
1000
1
C _oss
100
Crss
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
1
0.8
0.6
0.4
-60
10
8
6
-20
20
60
100 140
Tj, Junction Temperature(°C)
Gate Charge Characteristics
VDS=48V
VDS=30V
VDS=12V
0.1
VDS=10V
Pulsed
Ta=25°C
0.01
0.001
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDS(ON)
10 ^Limite
100μs
1ms
1
10ms
100m
0.1
1s
TA=25°C, Tj=150°C, VGS=10V
DC
RθJA=78°C/W,Single Pulse
0.01
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
4
2
ID=4.5A
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
6
5
4
3
2
TA=25°C, VGS=10V
1
RθJA=78°C/W
0
25
50
75 100 125 150 175
TJ, Junction Temperature(°C)
MTC5806AQ8
CYStek Product Specification