MTC5806AQ8-J Datasheet, PDF (1/12 Pages) Cystech Electonics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 1/12
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC5806AQ8
BVDSS
ID
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)4.5V
N-CH
60V
4.5A
37mΩ
42mΩ
P-CH
-60V
-3.5A
70mΩ
93mΩ
Description
The MTC5806AQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free package
Equivalent Circuit
MTC5806AQ8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MTC5806AQ8
CYStek Product Specification