MTB6D0N03BJ3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : CA00J3
Issued Date : 2015.10.23
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
C _oss
100
Crss
f=1MHz
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
1.2
ID=1mA
1
0.8
0.6
ID=250μ A
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
VDS=5V
0.1
Pulsed
Ta=25°C
0.01
0.001 0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
1000
RDS(ON)
100 ^Limited
10
1
TC=25°C, Tj=150°C
VGS=10V,RθJC=3.8°C/W
Single Pulse
0.1
0.1
1
10
VDS, Drain-Source Voltage(V)
10μs
100μs
1ms
10ms
100ms
1s
DC
100
8
6
4
2
VDS=15V
ID=14A
0
0
4
8
12
16
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
50
45
40
35
30
25
20
15
10
VGS=10V, RθJC=3.8°C/W
5
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB6D0N03BJ3
CYStek Product Specification