MTB6D0N03BJ3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : CA00J3
Issued Date : 2015.10.23
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
td(ON) *1, 2
-
8.8
-
tr *1, 2
td(OFF) *1, 2
-
-
14.6
25
-
-
ns VDS=15V, ID=14A, VGS=10V, RGS=3Ω
tf *1, 2
Rg
-
6.4
-
-
1.9
-
Ω f=1MHz
Source-Drain Diode
IS *1
ISM *3
-
-
44
-
-
176
A
VSD *1
-
0.87
1.3
V
trr
-
10.5
-
ns
Qrr
-
4.3
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
IS=25A, VGS=0V
IF=14A, dIF/dt=100A/μs
Recommended soldering footprint
MTB6D0N03BJ3
CYStek Product Specification