MTB60B06Q8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – MTB60B06Q8

CYStech Electronics Corp.
Spec. No. : C796Q8
Issued Date : 2013.07.08
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
100
10
0.1
C _oss
Crss
1
10
100
-VDS, Drain-Source Voltage(V)
Threshold Voltage vs Junction Tempearture
1.6
1.4
ID=-250uA
1.2
1
0.8
0.6
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
100
RDSON
10 ^limited
100μs
1ms
10ms
1
100ms
1s
0.1 _{TA=25°C, Tj=175°C}
VGS=-10V, RθJA=62.5°C/W
Single Pulse
DC
0.01
0.01
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.01
VDS=-5V
Pulsed
Ta=25°C
0.1
1
10
100
-ID, Drain Current(A)
Gate Charge Characteristics
10
VDS=-12V
8
VDS=-30V
VDS=-48V
6
4
2
ID=-4.5A
0
0
4
8
12 16
20 24
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5 _{TA=25°C, VGS=-10V, RθJA=62.5°C/W}
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB60B06Q8
CYStek Product Specification