MTB60B06Q8 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – MTB60B06Q8

CYStech Electronics Corp.
Spec. No. : C796Q8
Issued Date : 2013.07.08
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
20
10V,9V,8V,7V,6V,5V,4V
15
10
-VGS=3V
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
5
0.6
-VGS=2V
ID=-250μA,
VGS=0V
0.4
0
-75 -50 -25 0 25 50 75 100 125 150 175
0
1 _{-VDS, Dra2in-Source V3oltage(V)} 4
5
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=-2.5V
100
VGS=-3V
VGS=-3.5V
VGS=-4.5V
VGS=-10V
10
0.01
0.1
1
10
100
-ID, Drain Current(A)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0
2
4
6
8
10
-IDR, Reverse Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
360
320
280
240
200
160
ID=-3.5A
120
80
40
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8
VGS=-4.5V, ID=-3A
1.6
1.4
1.2
1
VGS=-10V, ID=-3.5A
0.8
0.6
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB60B06Q8
CYStek Product Specification