MTB280N15N6 Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C874N6
Issued Date : 2016.05.10
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
8
7
VDS=10V
6
5
4
3
2
1
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
Single Pulse Maximum Power Dissipation
500
450
400
TJ(MAX)=150°C
TA=25°C
350
RθJA=62.5°C/W
300
250
200
150
100
50
0
5
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width(s)
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Power Derating Curve
Mounted on FR-4 board
with 1 in^² pad area
20 40 60 80 100 120 140 160
TA, Ambient Temperature(℃)
4
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
Power Derating Curve
20 40 60 80 100 120 140 160
TC, Case Temperature(℃)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=62.5°C/W
0.02
0.01
0.01
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB280N15N6
CYStek Product Specification