MTB280N15N6 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C874N6
Issued Date : 2016.05.10
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode MOSFET
MTB280N15N6
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
VGS=-10V, ID=-1.5A
RDSON(TYP)
VGS=-4.5V, ID=-1.5A
150V
2.2A
1.7A
288mΩ
299mΩ
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating package
Equivalent Circuit
MTB280N15N6
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol Limits Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
150
V
VGS
±20
TC=25 °C
2.2
Continuous Drain Current
TC=70 °C
1.8
TA=25 °C (Note 1)
ID
1.7
A
TA=70 °C (Note 1)
1.4
Pulsed Drain Current (Note 2, 3)
IDM
8
TC=25 °C
3.2
Total Power Dissipation
TC=70 °C
TA=25 °C
2.1
PD
W
2
TA=70 °C
1.25
Operating Junction Temperature and Storage Temperature Range Tj, Tstg -55~+150 °C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC
Thermal Resistance, Junction-to-ambient, max (Note 1)
RθJA
39
62.5
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
MTB280N15N6
CYStek Product Specification