MTA55N20J3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C976J3
Issued Date : 2014.09.15
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C _oss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
100
Crss
0.6
ID=250μ A
0.4
10
0.1
0.2
1
10
100
VDS, Drain-Source Voltage(V)
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
10
Gate Charge Characteristics
10
VDS=160V
8
VDS=100V
1
0.1
0.01
0.001
VDS=15V
Ta=25°C
Pulsed
0.01
0.1
1
10
ID, Drain Current(A)
6
4
2
ID=20A
0
0
20 40 60 80 100 120
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDSON
Limited
10
1
100μs
1ms
10ms
100ms
1s
DC
0.1 ^{TC=25°C, Tj=175°C}
VGS=10V, θJC=1.4°C/W
Single Pulse
0.01
0.1
\
1
10
100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
30
25
20
15
10
5 _{VGS=10V, RθJC=1.4°C/W}
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTA55N20J3
CYStek Product Specification