MTA55N20J3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=1.6mH, ID=20A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
Total Power Dissipation @TC=25℃
(Note 2)
Total Power Dissipation @TA=25℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
Spec. No. : C976J3
Issued Date : 2014.09.15
Revised Date :
Page No. : 2/9
Limits
Unit
200
±20
V
25
17.7
A
60
20
320
mJ
4.6
107
W
1.14
-55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.4
110
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
200
VGS(th)
0.5
IGSS
-
IDSS
-
-
RDS(ON) *1
-
-
GFS *1
-
Dynamic
Qg *1, 2
-
Qgs *1, 2
-
Qgd *1, 2
-
td(ON) *1, 2
-
tr *1, 2
-
td(OFF) *1, 2
-
tf *1, 2
-
-
-
V VGS=0V, ID=250μA
0.8
1.5
V VDS =VGS, ID=250μA
-
±100
nA V_GS=±20V, V_DS=0V
-
-
1
25
μA
VDS =200V, VGS =0V
VDS =160V, VGS =0V, TJ=125°C
52
62
mΩ ^{VGS =10V, ID=11A}
52
70
VGS =4.5V, ID=5A
40
-
S VDS =15V, ID=11A
100
-
8.6
-
nC VDS=160V, ID=20A, VGS=10V
18.4
-
16.8
-
51
528
-
-
ns
VDS=100V, ID=20A, VGS=10V,
RG=25Ω
309
-
MTA55N20J3
CYStek Product Specification