BTB1580SM3 Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C655M3
Issued Date : 2017.01.26
Revised Date : 2017.02.02
Page No. : 5/8
Typical Characteristics(Cont.)
10000
Built-in Diode Characteristics
Capacitance vs Reverse-Biased Voltage
100
1000
100
1
-40°C
0°C
25°C
85°C
140°C
Cib
Cob
10
10
100
1000
10000
0.1
1
10
100
-IF, Forward Current(mA)
VR, Reverse-Biased Voltage(V)
Power Derating Curves
3
See Note 3 on page 2
2.5
See Note 4 on page 2
2
1.5
See Note 2 on page 2
1
0.5
0
0 25 50 75 100 125 150 175 200
TA, Ambient Temperature(℃)
Power Derating Curve
4
3.5
3
2.5
2
1.5
1
0.5
0
0 25 50 75 100 125 150 175 200
TC, Case Temeprature(℃)
Emitter Grounded Output Characteristics
6
IB=-20mA
5
IB=-10mA
IB=-6mA
4
IB=-4mA
IB=-2mA
3
2
1
0
0
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
Emitter Grounded Output Characteristics
7
6
IB=-50mA
IB=-25mA
5
IB=-10mA
IB=-5mA
4
3
2
1
0
0
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
BTB1580SM3
CYStek Product Specification