BTB1580SM3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C655M3
Issued Date : 2017.01.26
Revised Date : 2017.02.02
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Case
RθJC
Power Dissipation
PD
Power Dissipation @ TC=25°C
Opeearting Junction Temperature Range
Tj
Storage Temperature Range
Tstg
Note : 1. Single Pulse Pw≦350μs, Duty≦2%.
2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on a ceramic board with area measuring 40×40×1mm.
4. When mounted on a FR-4 PCB with area measuring 30×30×1 mm.
Limits
-120
-120
-5
-4
-6 (Note 1)
208
125 (Note 2)
62.5 (Note 3)
85 (Note 4)
43
0.7
1.2 (Note 2)
2.4 (Note 3)
1.8 (Note 4)
3.5
-55~+175
-55~+175
Unit
V
A
°C/W
W
°C
Characteristics (Ta=25°C)
Symbol
BVCEO
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
-120
-120
-
-
-
-
1000
1000
-
Typ.
-
-
-
-
-
-
-
-
Max.
-
-
-100
-1
-2
-1.8
-2.2
-
-
200
Unit
Test Conditions
V
IC=-1mA, IB=0
V
IC=-100μA, IE=0
nA VCB=-120V, IE=0
μA VCE=-120V, IB=0
mA VEB=-5V, IC=0
V
IC=-2A, IB=-2mA
V
VCE=-4V, IC=-2A
-
VCE=-4V, IC=-1A
-
VCE=-4V, IC=-2A
pF VCB=-10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
BTB1580SM3
CYStek Product Specification