MTP4409H8 Datasheet, PDF (4/8 Pages) Cystech Electonics Corp. – P-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C808H8
Issued Date : 2013.09.02
Revised Date :
Page No. : 4/8
Typical Characteristics
Typical Output Characteristics
200
10V
180 _9V
160 8V
140 ^7V
6V
120
100
80
-VGS=5V
-VGS=4V
60
40
-VGS=3V
20
0
0
-VGS=2V
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-100 -50
0
50 100 150 200
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
100
VGS=-2.5V
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
10
VGS=-3V
VGS=-4.5V
VGS=-10V
1
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
160
0.6
Tj=150°C
0.4
0.2
0
2
4
6
8
10
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
1.4
VGS=-10V, ID=-15A
1.2
120
1
VGS=-4.5V, ID=-10A
80
0.8
40
ID=-15A
0.6
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTP4409H8
CYStek Product Specification