MTP4409H8 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – P-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V
Continuous Drain Current @ TC=100°C, VGS=-10V
Continuous Drain Current @ TA=25°C, VGS=-10V
Continuous Drain Current @ TA=70°C, VGS=-10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.5mH, ID=-15A, RG=25Ω
TC=25℃
Total Power Dissipation
TC=100℃
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
Spec. No. : C808H8
Issued Date : 2013.09.02
Revised Date :
Page No. : 2/8
Limits
Unit
-30
V
±20
-63
-40
-15 *3
A
-12 *3
-200 *1,2
-15
56
mJ
50
20
W
2.5 *3
1.6 *3
-55~+150
°C
Thermal Data
Parameter
Symbol
Thermal Resistance, Junction-to-case, max
Rth,j-c
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W at minimum pad.
Value
2.5
50 *3
Unit
°C/W
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
-30
-
-
V
VGS=0, ID=-250μA
VGS(th)
-1
-1.5
-3.0
V
VDS = VGS, ID=-250μA
GFS *1
-
IGSS
-
25
-
S
VDS =-5V, ID=-15A
-
±100
nA
VGS=±20
IDSS
-
-
-
RDS(ON) *1
-
-
-
-1
-25
μA
VDS =-30V, VGS =0
VDS =-24V, VGS =0, Tj=125°C
7.3
9.5
mΩ VGS =-10V, ID=-15A
11
17
mΩ VGS =-4.5V, ID=-10A
Dynamic
Ciss
-
4342
-
Coss
-
374
-
pF VDS=-25V,VGS=0V, f=1MHz
Crss
-
306
-
MTP4409H8
CYStek Product Specification