MTNN8452KQ8 Datasheet, PDF (4/10 Pages) Cystech Electonics Corp. – Asymmetric Dual N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C559Q8
Issued Date : 2012.04.27
Revised Date : 2012.04.30
Page No. : 4/12
Typical Characteristics : FET 1
40
35
30
25
20
15
10
5
0
0
Typical Output Characteristics
10V, 9V, 8V, 7V, 6V, 5V
4V
VGS=2V
VGS=3V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=2.5V
100
VGS=3V
VGS=4.5V
10
VGS=10V
1
0.01
0.1
1
10
100
ID, Drain Current(A)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
ID=8A
160
140
120
100
80
60
40
20
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Drain-Source On-State Resistance vs Junction Tempearture
1.8
1.6
VGS=10V, ID=8A
1.4
1.2
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
1
C _oss
0.8
100
Crss
0.6
0.4
10
-60 -20 20
60 100 140 180
0.1
1
10
100
Tj, Junction Temperature(°C)
VDS, Drain-Source Voltage(V)
MTNN8452KQ8
CYStek Product Specification