MTNN8452KQ8 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – Asymmetric Dual N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C559Q8
Issued Date : 2012.04.27
Revised Date : 2012.04.30
Page No. : 1/12
Asymmetric Dual N-Channel Enhancement Mode MOSFET
MTNN8452KQ8
BVDSS
ID
RDSON(TYP.)@VGS=10V
RDSON(TYP.)@VGS=4.5V
FET1
30V
8A
11mΩ
18mΩ
FET 2
30V
10.2A
11mΩ
18mΩ
Description
The MTNN8452KQ8 uses advanced trench technology to provide excellent RDS(on) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use
in DC-DC converters. A Schottky diode in parallel with the synchronous MOSFET to boost efficiency
further.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTNN8452KQ8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MTNN8452KQ8
CYStek Product Specification