MTE130N20J3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
30
10V, 9V, 8V, 7V
25
20
VGS=6V
15
10
VGS=5V
5
VGS=4.5V
0
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=4.5V
100
VGS=6V
VGS=10V
Reverse Drain Current vs Source-Drain Voltage
1.2
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
600
500
ID=9A
400
300
200
100
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
3
VGS=10V, ID=9A
2.5
2
1.5
1
0.5
RDS(ON)@Tj=25°C :156mΩ typ
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTE130N20J3
CYStek Product Specification