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MTE130N20J3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
200
V
VGS
±20
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
(Note 1)
ID
18
(Note 1)
13
Pulsed Drain Current
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
(Note 3)
IDM
30
A
(Note 4)
IDSM
1.9
(Note 4)
1.5
Avalanche Current
(Note 3)
IAS
3
Avalanche Energy @ L=1mH, ID=3A, VDD=50V (Note 3)
EAS
4.5
mJ
Power Dissipation
TC=25°C
TC=100°C
(Note 1)
125
PD
W
(Note 1)
62.5
Power Dissipation
TA=25°C
TA=70°C
(Note 2)
2
PDSM
W
(Note 2)
1.3
Operating Junction and Storage Temperature
Tj, Tstg -55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t≤10s (Note 2)
Thermal Resistance, Junction-to-ambient, max
(Note 4)
Symbol
Rth,j-c
Rth,j-a
Value
1.2
62.5
90
Unit
°C/W
°C/W
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
MTE130N20J3
CYStek Product Specification