MTDN1034C6 Datasheet, PDF (4/8 Pages) Cystech Electonics Corp. – N-CHANNEL MOSFET (dual transistors)

CYStech Electronics Corp.
Spec. No. : C833C6
Issued Date : 2012.08.07
Revised Date : 2013.08.27
Page No. : 4/ 8
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
100
Ciss
Threshold Voltage vs Junction Tempearture
1.6
1.4
ID=250μA
1.2
10
C _oss
1
0.8
1
0.1
Crss
1
10
VDS, Drain-Source Voltage(V)
0.6
0.4
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
10
8
TJ(MAX)=150°C
TA=25°C
RθJA=833°C/W
6
4
2
0
0.001 0.01
0.1
1
10
100
Pulse Width(s)
Gate Charge Characteristics
5
4
3
2
VDS=15V
ID=300mA
1
0
0
0.1 0.2 0.3 0.4 0.5 0.6
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
10
1
0.1
TA=25°C, Tj=150°C,
0.01
VGS=4.5V, RθJA=833°C/W
Single Pulse
0.001
0.01
MTDN1034C6
0.1
1
10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
DC
100
Maximum Drain Current vs JunctionTemperature
0.35
0.3
0.25
0.2
0.15
0.1
0.05
TA=25°C, VGS=4.5V, RθJA=833°C/W
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification