MTDN1034C6 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-CHANNEL MOSFET (dual transistors)

CYStech Electronics Corp.
Spec. No. : C833C6
Issued Date : 2012.08.07
Revised Date : 2013.08.27
Page No. : 1/ 8
N-CHANNEL MOSFET (dual transistors)
MTDN1034C6 BVDSS
ID
Features
• High speed switching
• Low-voltage drive(1.5V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free package
RDSON(TYP)
VGS=4.5V, ID=200mA
VGS=2.5V, ID=175mA
VGS=1.8V, ID=150mA
VGS=1.5V, ID=40mA
30V
0.3A
0.85Ω
1.23Ω
1.8Ω
2.3Ω
Equivalent Circuit
MTDN1034C6
Outline
SOT-563
D1 G2 S2
Tr1
Tr2
S1 G1 D2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current @ VGS=4.5V, TA=25°C
Continuous Drain Current @ VGS=4.5V, TA=85°C
ID
0.3
0.22
A
Pulsed Drain Current
IDM
1.6 (Note 1)
Power Dissipation
Pd
150 (Note 2)
mW
Operating Junction Temperature Range
Tj
-55~+150
°C
Storage Temperature Range
Tstg
-55~+150
°C
Note : 1. Pulse test, pulse width≤300μs, duty≤2%
2. 120mW per element must not be exceeded.
MTDN1034C6
CYStek Product Specification