MTB23C04J4 Datasheet, PDF (4/13 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Q1, N-CH Typical Characteristics
Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 4/13
Typical Output Characteristics
30
10V, 9V, 8V, 7V, 6V, 5V
25
4V
20
15
10
5
VGS=3V
0
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=2.5V VGS=3V
100
VGS=4.5V
10
0.01
VGS=10V
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
ID=5A
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.2
2
VGS=10V, ID=5A
1.8
1.6
1.4
1.2
1
0.8
0.6
RDS(ON)@Tj=25°C : 20mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB23C04J4
CYStek Product Specification