MTB23C04J4 Datasheet, PDF (1/13 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 1/13
N & P-Channel Enhancement Mode Power MOSFET
MTB23C04J4
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
BVDSS
ID
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)4.5V
N-CH
40V
5.2A
20 mΩ
28 mΩ
P-CH
-40V
-6.2A
13.3 mΩ
17.8 mΩ
Equivalent Circuit
MTB23C04J4
Outline
TO-252-4L
G：Gate D：Drain
S：Source
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
40
VGS
±20
-40
±20
V
Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1)
22
-26
Continuous Drain Current @ TC=100°C, VGS=10V(-10V) (Note1)
Continuous Drain Current @ TA=25°C, VGS=10V(-10V) (Note4)
ID
15.6 -18.4
5.2
-6.2 A
Continuous Drain Current @ TA=70°C, VGS=10V(-10V) (Note4)
4.2
-5.0
Pulsed Drain Current *1
(Note3) IDM
30
-30
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TA=70℃)
(Note1)
25
PD
(Note1)
12.5
W
(Note2)
2.4
PDSM
(Note2)
1.7
Operating Junction and Storage Temperature Range
Tj, Tstg -55~+175
°C
MTB23C04J4
CYStek Product Specification