MTA90N03ZN3 Datasheet, PDF (4/8 Pages) Cystech Electonics Corp. – 30V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C831N3
Issued Date : 2012.07.04
Revised Date : 2012.12.28
Page No. : 4/8
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.6
1.4
ID=250μA
1.2
100
1
C _oss
0.8
Crss
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
10
8
TJ(MAX)=150°C
TA=25°C
RθJA=90°C/W
6
4
2
0
0.01
0.1
1
10
100
Pulse Width(s)
0.6
0.4
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
VDS=3V
1
0.1
0.01
0.001
VDS=5V
Ta=25°C
Pulsed
0.01
0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
1
0.1
0.01 TA=25°C, Tj=150°C,
VGS=4.5V, RθJA=90°C/W
Single Pulse
0.001
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
DC
100
Maximum Drain Current vs JunctionTemperature
4
3.5
3
2.5
2
1.5
1
0.5 ^{TA=25°C, VGS=4.5V, RθJA=90°C/W}
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTA90N03ZN3
CYStek Product Specification