MTA90N03ZN3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 30V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C831N3
Issued Date : 2012.07.04
Revised Date : 2012.12.28
Page No. : 1/8
30V N-Channel Enhancement Mode MOSFET
MTA90N03ZN3
BVDSS
ID
Features
• Simple drive requirement.
RDSON@VGS=4.5V, ID=2.5A
RDSON@VGS=3V,ID=2.5A
• Small package outline.
• ESD protected.
• Pb-free lead plating and halogen-free package.
30V
3.2A
130mΩ(typ)
144mΩ(typ)
Symbol
MTA90N03ZN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C , VGS=4.5V
Continuous Drain Current @ TA=70°C, VGS=4.5V
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃
Linear Derating Factor
ESD susceptibility
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
4. Human body model, 1.5kΩ in series with 100pF.
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
MTA90N03ZN3
Limits
30
±12
3.2
2.6
10
1.38 (Note 3)
0.01
1000 (Note 4)
-55~+150
Unit
V
A
W
W/°C
V
°C
CYStek Product Specification