BU941ZLE3 Datasheet, PDF (4/6 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C660E3
Issued Date : 2014.01.09
Revised Date :
Page No. : 4/6
Typical Characteristics(Cont.)
10000
Saturation Voltage vs Collector Current
Built-in Diode Forward Characteristics
10000
0°C
-40°C
1000
0°C -40°C
1000
125°C 75°C 25°C
100
0.1
IC=80IB
125°C 75°C 25°C
100
1
10
IC, Collector Current(A)
100
0.01
0.1
1
10
100
IF, Forward Current(A)
Output Capacitance vs Reverse-Biased Voltage
1000
2.5
Power Derating Curve
2
1.5
100
1
0.5
10
0
0.1
1
10
100
0
VR, Reverse-Biased Voltage(V)
50
100
150
200
TA, Ambient Temperature(℃)
160
140
120
100
80
60
40
20
0
0
Power Derating Curve
50
100
150
200
TC, Case Temperature(℃)
BU941ZLE3
CYStek Product Specification