BU941ZLE3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C660E3
Issued Date : 2014.01.09
Revised Date :
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
IB(DC)
IB(Pulse)
Pd(TA=25℃)
Pd(TC=25℃)
RθJA
RθJC
Tj
Tstg
Limits
350
350
5
15
30 *1
1
5
*1
2
150
75
1
175
-65~+175
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VBE(sat) 1
*VBE(sat) 2
*VBE(sat) 3
*hFE 1
*hFE 2
*VFEC
Min.
350
350
-
-
-
-
-
-
-
-
-
-
1000
600
-
Typ.
-
-
-
-
5.34
1.04
1.20
1.12
1.39
1.77
1.86
1.94
-
-
1.08
Max.
450
450
10
10
10
1.6
1.8
1.6
2.0
2.2
2.5
2.5
4500
-
1.5
Unit
Test Conditions
V
IC=1mA, IE=0
IC=100mA, IB=0
μA
VCE=300V, IE=0
VCB=300V, IE=0
mA VEB=5V, IC=0
IC=6A, IB=10mA
IC=8.4A, IB=15mA
IC=10A, IB=250mA
V
IC=12A, IB=50mA
IC=8A, IB=100mA
IC=10A, IB=250mA
IC=12A, IB=300mA
-
VCE=10V, IC=5A
-
VCE=10V, IC=10A
V
IC=10A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
BU941ZLE3
CYStek Product Specification