BTD2195SN3 Datasheet, PDF (4/7 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C654N3
Issued Date : 2017.08.02
Revised Date :
Page No. : 4/7
Typical Characteristics(Cont.)
10000
On Voltage vs Collector Current
VBEON@VCE=4V
10000
Built-in Diode Characteristics
1000
100
1
-40°C
0°C
25°C
85°C
140°C
10
100
1000
IC, Collector Current(mA)
10000
Power Derating Curves
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0 25 50 75 100 125 150 175 200
TA, Ambient Temperature(℃)
Power Derating Curve
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175 200
TC, Case Temeprature(℃)
1000
100
1
-40°C
0°C
25°C
85°C
140°C
10
100
1000
IF, Forward Current(mA)
10000
Capacitance vs Reverse-Biased Voltage
100
10
0.1
Cob
Cib
1
10
100
VR, Reverse-Biased Voltage(V)
BTD2195SN3
CYStek Product Specification