BTD2195SN3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C654N3
Issued Date : 2017.08.02
Revised Date :
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Power Dissipation @ TA=25°C
Power Dissipation @ TC=25°C
Opeearting Junction Temperature Range
Storage Temperature Range
Note : 1. Single Pulse Pw≦350μs, Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
RθJA
RθJC
PD
Tj
Tstg
Limits
150
150
5
2
4 (Note 1)
500
100
0.3
1.5
-55~+175
-55~+175
Unit
V
A
°C/W
W
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
150
-
-
-
-
2000
1000
-
Typ.
-
-
-
-
-
-
-
Max.
-
100
1
2
1.2
2.2
-
-
200
Recommended Soldering Footprint
Unit
Test Conditions
V
IC=100μA, IE=0
nA VCB=150V, IE=0
μA VCE=150V, IB=0
mA VEB=5V, IC=0
V
IC=2A, IB=2mA
V
VCE=4V, IC=2A
-
VCE=4V, IC=1A
-
VCE=4V, IC=2A
pF VCB=10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
BTD2195SN3
CYStek Product Specification