BTC4226S3 Datasheet, PDF (4/7 Pages) Cystech Electonics Corp. – NPN Silicon Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C622S3
Issued Date : 2013.06.05
Revised Date :
Page No. : 4/7
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
1000
VCESAT@IC=5IB
Saturation Voltage vs Collector Current
1000
VCESAT@IC=10IB
100
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
100
IC, Collector Current(mA)
10000
Saturation Voltage vs Collector Current
VBESAT@IC=5IB
100
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
100
IC, Collector Current(mA)
10000
Saturation Voltage vs Collector Current
VBESAT@IC=10IB
1000
100
1
10
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
IC, Collector CurrentmA)
Capacitance vs Reverse-biased Voltage
Cib
1000
100
1
200
150
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
IC, Collector CurrentmA)
Power Derating Curve
1
100
Cob
50
0.1
0.1
1
10
100
VR, Reverse-biased Voltage(V)
0
0 25 50 75 100 125 150 175
Ambient Temperature---TA(℃)
BTC4226S3
CYStek Product Specification