BTC4226S3 Datasheet, PDF (3/7 Pages) Cystech Electonics Corp. – NPN Silicon Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C622S3
Issued Date : 2013.06.05
Revised Date :
Page No. : 3/7
Typical Characteristics
Emitter Grounded Output Characteristics
0.14
0.12
1mA
0.1
0.08
0.06
0.04
0.02
0
0
500uA
400uA
300uA
200uA
IB=100uA
1
2
3
4
5
6
VCE, Collector-to-Emitter Voltage(V)
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
IB=500uA
1
2
3
4
5
6
VCE, Collector-to-Emitter Voltage(V)
Current Gain vs Collector Current
1000
VCE=1V
Current Gain vs Collector Current
1000
VCE=2V
100
100
Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10
100
1
10
100
IC, Collector Current(mA)
IC, Collector Current(mA)
Current Gain vs Collector Current
1000
VCE=5V
Current Gain vs Collector Current
1000
VCE=10V
100
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
10
1
10
100
1
10
100
IC, Collector Current(mA)
IC, Collector Current(mA)
BTC4226S3
CYStek Product Specification