BTB1184J3S Datasheet, PDF (4/7 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C817J3
Issued Date : 2015.02.25
Revised Date :
Page No. : 4/7
Typical Characteristics
Current Gain vs Collector Current
1000
VCE=3V
Saturation Voltage vs Collector Current
1000
100
VCESAT@IC=50IB
100
VCE=2V
10
1
VCE=1V
10
100
1000
Collector Current---IC(mA)
10000
10
1
1
VCESAT=20IB
VCESAT=30IB
10
100
1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
10000
On Voltage vs Collector Current
1000
VBESAT@IC=10IB
1000
VBEON@VCE=2V
100
1
10
100
1000
Collector Current---IC(mA)
10000
Power Derating Curve
1.2
1
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature---TA(℃)
100
1
10
100
1000
Collector Current---IC(mA)
10000
16
14
12
10
8
6
4
2
0
0
Power Derating Curve
20 40 60 80 100 120 140 160
Ambient Temperature---TA(℃)
BTB1184J3S
CYStek Product Specification