BTB1184J3S Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C817J3
Issued Date : 2015.02.25
Revised Date :
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
VCBO
VCEO
VEBO
IC
ICP
Pd(TA=25℃)
Pd(TC=25℃)
-60
-50
-6
-3
-7 *1
1
15 *2
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
RθJA
125
RθJC
8.33 *2
Operating Junction and Storage Temperature Range
Tj,Tstg
-55~+150
Note : *1. Single Pulse Pw=10ms
*2 . Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger.
Unit
V
V
V
A
W
°C/W
°C
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*RCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
-60
-
-50
-
-6
-
-
-
-
-
-
-0.26
-
130
-
-0.96
200
-
270
-
80
-
-
80
-
35
Max.
-
-
-
-1
-1
-0.5
250
-1.2
-
560
-
-
-
Unit
V
V
V
μA
μA
V
mΩ
V
-
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-40V, IE=0
VEB=-4V, IC=0
IC=-2A, IB=-0.1A
IC=-2A, IB=-0.1A
IC=-2A, IB=-0.1A
VCE=-2V, IC=-20mA
VCE=-3V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-0.1A, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE2
Rank
Range
S
270~560
BTB1184J3S
CYStek Product Specification