|
BTA3513I3 Datasheet, PDF (4/7 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor | |||
|
◁ |
CYStech Electronics Corp.
Spec. No. : C607I3
Issued Date : 2012.02.10
Revised Date :
Page No. : 4/9
Typical Characteristics(Cont.)
Current Gain vs Collector Current
1000
125â
Saturation Voltage vs Collector Current
1000
VCESAT@IC=10IB
100
75â
25â
-VCE=5V
10
10
100
1000
-IC, Collector Current(mA)
100
10000
10
1
25â
75â
125â
10
100
1000
-IC, Collector Current(mA)
10000
Saturation Voltage vs Collector Current
1000
VCESAT@IC=20IB
10000
Saturation Voltage vs Collector Current
VCESAT@IC=50IB
100
10
1
25â
75â
125â
10
100
1000
-IC, Collector Current(mA)
10000
10000
Saturation Voltage vs Collector Current
VBESAT@IC=10IB
1000
100
10
1
25â
75â
125â
10
100
1000
-IC, Collector Current(mA)
10000
10000
On Voltage vs Collector Current
-VCE=2V
75â
1000
25â
75â
25â
1000
100
1
125â
10
100
1000
-IC, Collector Current(mA)
10000
100
1
125â
10
100
1000
-IC, Collector Current(mA)
10000
BTA3513I3
CYStek Product Specification
|
▷ |