BTA3513I3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTA3513I3
Features
• Low VCE(sat)
• High BVCEO
• Excellent current gain characteristics
• RoHS compliant package
BVCEO
IC
RCESAT
Spec. No. : C607I3
Issued Date : 2012.02.10
Revised Date :
Page No. : 1/9
-80V
-10A
75mΩ typ.
Symbol
BTA3513I3
Outline
TO-251
B：Base
C：Collector
E：Emitter
BB CC E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw≦300μs,Duty≦2%.
2. When mounted on a PCB with the minimum pad size.
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
BTA3513I3
Limits
-100
-80
-7
-10
-16 (Note 1)
1.75 (Note 2)
20
71.4 (Note 2)
6.25
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
CYStek Product Specification