BCR1002N3 Datasheet, PDF (4/7 Pages) Cystech Electonics Corp. – PNPN Epitaxial Planar SCR

CYStech Electronics Corp.
Spec. No. : C700N3
Issued Date : 2008.02.25
Revised Date :2014.01.24
Page No. : 4/7
Typical Characteristics
Gate Trigger Current vs Junction Temperature
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125
JunctionTemperature---TJ(℃)
Gate Trigger Voltage vs Junction Temperature
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-50 -25 0 25 50 75 100 125
Junction Temperature---TJ(°C)
Holding Current vs Junction Temperature
10
Latching Current vs Junction Temperature
1000
1
100
0.1
-50 -25 0 25 50 75 100 125
Junction Temperature---TJ(°C)
On-state Characteristics
1000
TJ=125°C
TJ=25°C
100
TJ=-40°C
10
-50 -25 0
25 50 75 100 125
Junction Temperature---TJ(°C)
10
0
0.4
0.8
1.2
1.6
2
Instantaneous On-state Voltage---VT(V)
BCR1002N3
CYStek Product Specification