BCR1002N3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – PNPN Epitaxial Planar SCR

CYStech Electronics Corp.
Spec. No. : C700N3
Issued Date : 2008.02.25
Revised Date :2014.01.24
Page No. : 2/7
Absolute Maximum Ratings (TJ=25°C)
Parameter
Symbol
Limits
Unit
Peak Repetitive Off-State Voltage @TJ=-40℃ to 125℃,
RGK=1KΩ
VDRM
140
V
On-State Current @TC=80℃
IT(RMS)
350
mA
Average On-State Current @ TC=80℃
IT(AV)
220
mA
Reverse Peak Gate Voltage @TA=25℃, Pulse Width≤1μs
VGRM
8
V
Forward Peak Gate Current @TA=25℃, Pulse Width≤1μs
IGM
500
mA
Forward Average Gate Power @ TA=25℃, t=8.3ms
PG(AV)
100
mW
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
Thermal Resistance, Junction to Case
RθJC
208
°C/W
Junction Temperature
Tj
-40~+125
°C
Storage Temperature
Tstg
-40~+150
°C
Note : Stress exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional
operation above the recommended operating conditions is not implied. Extended exposure to stresses above the
recommended operating conditions may affect device reliability.
VDRM can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however , positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltage shall not be tested with
a constant current source such that the voltage ratings of the device are exceeded.
Characteristics (Ta=25°C)
Symbol
IDRM
IDRM
*VTM
IGT
IH
IL
VGT
dV/dt
dI/dt
Min.
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
-
30
-
Max.
100
10
1.5
100
5
6
0.8
-
-
Unit
μA
μA
V
μA
mA
mA
V
V/μs
A/μs
Test Conditions
VD=140V, RGK=1KΩ, TC=125℃
VD=140V, RGK=1KΩ, TC=25℃
ITM=200mA
VD=7V, RL=100Ω
VD=7V, RGK=1KΩ
VD=7V, IG=200μA
VD=7V, RL=100Ω
VD=35V, RGK=1KΩ
IG=10mA, dIG/dt=100mA/μs, PW=10μs
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
BCR1002N3
CYStek Product Specification