MTB11N03Q8_12 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C711Q8
Issued Date : 2009.05.07
Revised Date :2012.03.26
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Qg (VGS=10V) *1, 2
-
26
-
Qg (VGS=4.5V) *1, 2
-
Qgs *1, 2
-
19
6.2
-
-
nC _{VDS=15V, VGS=10V, ID=16A}
Qgd *1, 2
-
10
-
td(ON) *1, 2
-
7.5
-
tr *1, 2
td(OFF) *1, 2
-
6.3
-
ns ^{VDS=15V, ID=1A, VGS=10V,}
-
30
-
RGS=2.7Ω
tf *1, 2
-
5
-
Rg
-
1.7
-
Ω VGS=15mV, VDS=0V, f=1MHz
Source-Drain Diode
IS *1
ISM *3
-
-
5
-
-
20
A
VSD *1
-
-
1.3
V
trr
-
22
-
ns
Qrr
-
12
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
IF=IS, VGS=0V
IF=IS, dIF/dt=100A/μs
Ordering Information
Device
MTB11N03Q8
Package
SOP-8
(Pb-free & Halogen-free package)
Shipping
Marking
2500 pcs / Tape & Reel B11N03
MTB11N03Q8
CYStek Product Specification