MTB11N03Q8_12 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C711Q8
Issued Date : 2009.05.07
Revised Date :2012.03.26
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=11A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25℃
TA=100℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
Unit
30
V
±20
16 *3
10 *3
A
50 *1
16
9.8
mJ
4.9 *2
3.1 *3
W
1.2 *3
-55~+150
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25
°C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
40 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
30
VGS(th)
1.0
GFS *1
-
IGSS
-
IDSS
-
-
-
RDS(ON) *1
-
Dynamic
Ciss
-
Coss
-
Crss
-
-
1.5
20
-
-
-
6.7
10
1638
176
141
-
3.0
-
±100
1
25
8.5
13.5
-
-
-
V
VGS=0, ID=250μA
V
VDS = VGS, ID=250μA
S
VDS =5V, ID=11A
nA
VGS=±20
μA
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
mΩ VGS =10V, ID=16A
mΩ VGS =4.5V, ID=12A
pF
VGS=0V, VDS=15V, f=1MHz
MTB11N03Q8
CYStek Product Specification