MMBT2222A Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN switching transistor

CYStech Electronics Corp.
Spec. No. : C203N3
Issued Date : 2002.05.11
Revised Date : 2010.11.12
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
0.25
0.2
1mA
0.15
0.1
0.05
0
0
500uA
400uA
300uA
200uA
IB=100uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
Ta=125°C
Current Gain vs Collector Current
1000
Ta=125°C
100
Ta=25°C
Ta=75°C
10
1
1000
VCE=1V
10
100
Collector Current---IC(mA)
Current Gain vs Collector Current
Ta=125°C
100
Ta=25°C Ta=75°C
1000
VCE=2V
10
1
10
100
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
1000
VCESAT=10IB
100
Ta=25°C
Ta=75°C
VCE=10V
10
1
10
100
Collector Current---IC(mA)
100
10
1000
1
125°C
75°C
25°C
10
100
1000
Collector Current---IC(mA)
MMBT2222A
CYStek Product Specification