MMBT2222A Datasheet, PDF (1/8 Pages) NXP Semiconductors – NPN switching transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
MMBT2222A
Spec. No. : C203N3
Issued Date : 2002.05.11
Revised Date : 2010.11.12
Page No. : 1/8
Description
• The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching
application.
• High IC(Max), IC(Max) = 0.6A.
• Low VCE(sat) , Typ. VCE(sat) = 0.2V at IC/IB = 500mA/50mA.
Optimal for low Voltage operation.
• Complementary to MMBT2907A.
• Pb-free package
Symbol
MMBT2222A
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (TA=25°C)
Power Dissipation (TC=25°C)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating Junction Temperature Range
Storage Temperature
Note : Free air condition
MMBT2222A
Symbol
VCBO
VCEO
VEBO
IC
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
75
50
6
0.6
225 (Note)
560
556 (Note)
223
-55~+150
-55~+150
Unit
V
V
V
A
mW
mW
°C/W
°C/W
°C
°C
CYStek Product Specification