HBP3906S6R_17 Datasheet, PDF (3/7 Pages) Cystech Electonics Corp. – Dual General Purpose PNP Transistors

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C318S6R
Issued Date : 2003.04.11
Revised Date : 2017.08.11
Page No. : 3/7
Current Gain vs Collector Current
1000
HFE@VCE=1V
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
100
10
0.1
1
10
100
1000
Collector Current--- IC(mA)
10000
Saturation Voltage vs Collector Current
VBE(SAT)@IC=10IB
1000
10
0.1
1
10
100
1000
Collector Current IC-(mA)
Capacitance vs Reverse-Biased Voltage
10
Cob
100
0.1
1
10
100
1000
Collector Current---IC(mA)
Cutoff frequency vs Collector Current
1000
100
10
0.1
VCE=20V
1
10
100
Collector Current---IC(mA)
1
0.1
1
10
100
Reverse-Biased Voltage---(V)
Power Derating Curve
250
200
Dual
150
Single
100
50
0
0
50
100
150
200
Ambient Temperature---TA(℃)
HBP3906S6R
CYStek Product Specification