HBP3906S6R_17 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – Dual General Purpose PNP Transistors

CYStech Electronics Corp.
Spec. No. : C318S6R
Issued Date : 2003.04.11
Revised Date : 2017.08.11
Page No. : 2/7
The following characteristics apply to both Tr 1 and Tr 2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Package Dissipation @TA=25℃
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
Limits
Unit
-40
V
-40
V
-5
V
-200
mA
200 (Note 1)
mW
-55~+150
°C
-55~+150
°C
Note 1: Device is mounted on a FR-4 glass epoxy PCB with area measuring 1.0×0.75×0.062 in. 150 mW per element can’t
be exceeded
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
VCE(sat)
*VCE(sat)
VBE(sat)
*VBE(sat)
hFE
hFE
hFE
*hFE
*hFE
fT
Cob
Min.
-40
-40
-5
-
-
-
-
-
-
-
60
80
100
60
30
250
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-50
-100
-0.25
-0.4
-0.85
-0.95
-
300
-
-
-
4.5
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=-10μA
IC=-1mA
IE=-10μA
VCB=-30V
VCE=-30V, VEB=-3V
VEB=-4V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-100μA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HBP3906S6R
CYStek Product Specification