HBP1804M65 Datasheet, PDF (3/7 Pages) Cystech Electonics Corp. – Octuple High Voltage PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C619M65
Issued Date : 2015.10.28
Revised Date :
Page No. : 3/7
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
1.5mA
1mA
-IB=500uA
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
20mA
10mA
6mA
4mA
-IB=2mA
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
100
Tj=125°C
75°C
25°C
0°C
-40°C
1000
Tj=125°C
75°C
25°C
0°C
-40°C
100
10
-VCE=5V
-VCE=10V
1
10
0.1
1
10
100
1000
0.1
1
10
100
1000
-IC, Collector Current(mA)
-IC, Collector Current(mA)
Saturation Voltage vs Collector Current
1000
VCESAT@IC=10IB
Saturation Voltage vs Collector Current
1000
VCESAT@IC=20IB
100
10
0.1
‐40°C
0°C
25°C
75°C
125°C
1
10
100
-IC, Collector Current(mA)
1000
100
10
0.1
HBP1804M65
-40°C
0°C
25°C
75°C
125°C
1
10
100
1000
-IC, Collector Current(mA)
CYStek Product Specification