HBP1804M65 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – Octuple High Voltage PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C619M65
Issued Date : 2015.10.28
Revised Date :
Page No. : 2/7
The following ratings and characteristics apply to each transistor in this
device.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-300
mA
Total Power Dissipation
Pd
1.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE
*hFE
fT
Cob
Min.
-400
-400
-5
-
-
-
-
-
-
-
50
40
-
-
Typ.
-
-
-
-
-
-
-0.17
-0.18
-0.18
-0.73
-
-
100
4.6
Max.
-
-
-
-100
-100
-100
-0.3
-0.3
-0.3
-1
300
-
-
-
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-400V
VCE=-300V, REB=0Ω
VEB=-5V
IC=-20mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-100mA, IB=-20mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-100mA
VCE=-10V, IC=-10mA, f=5MHz
VCB=-10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
HBP1804M65
CYStek Product Specification