HBNP5213N6 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – NPN AND PNP Dual Epitaxial Planar Transistors

CYStech Electronics Corp.
Spec. No. : C627N6
Issued Date : 2013.10.17
Revised Date :
Page No. : 3/8
PNP Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-100
-
-
V
IC=-100μA
BVCEO
-80
-
-
V
IC=-10mA
BVEBO
-7
-
-
V
IE=-10μA
ICBO
-
-
-100
nA VCB=-100V
IEBO
-
-
-100
nA VEB=-7V
*VCE(sat)1
-
-0.16
-0.3
V
IC=-500mA, IB=-50mA
*VCE(sat)2
-
-
-0.6
V
IC=-700mA, IB=-35mA
*VBE(sat)
-
-
-1.2
V
IC=-1A, IB=-50mA
*hFE1
180
-
390
-
VCE=-10V, IC=-150mA
*hFE2
50
-
-
-
VCE=-10V, IC=-500mA
fT
150
200
-
MHz VCE=-10V, IC=-50mA, f=100MHz
Cob
-
11
15
pF VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Recommended Soldering Footprint
HBNP5213N6
CYStek Product Specification