HBN3101S6R Datasheet, PDF (3/6 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current
1000
10000
Saturation Voltage vs Collector Current
100
VCE = 20V
VCE = 10V
VCE = 5V
10
1
10
100
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
1000
VBE(SAT) @ IC =10IB
100
1
10
100
Collector Current---IC(mA)
1000
VCE(SAT) @ IC = 20IB
100
10
1
VCE(SAT) @ IC = 10IB
10
Collector Current---IC(mA)
250
200
150
100
50
0
0
Power Derating Curves
Dual
Single
50
100
150
Ambient Temperature---TA(℃)
100
200
Recommended Soldering Footprint
HBN3101S6R
CYStek Product Specification